SK Hynix Begins Mass Production of NAND Flash at 16nm Node

The World’s First Mass Production of 16nm NAND Flash Initiated by SK Hynix

by Anton Shilov
11/20/2013 | 11:00 PM

SK Hynix said on Wednesday that it had started full-scale mass production of 64Gb multi-level cell NAND flash memory using 16nm process technology. The world’s thinnest manufacturing process will eventually enable lower cost NAND flash memory and consequently more affordable memory cards, solid-state drives and other devices.

 

SK Hynix has been mass producing its 1st version of the world’s first 16nm NAND flash device since June and recently has started to mass produce the 2nd version which is more cost-competitive due to its smaller chip size. The company has also developed 128Gb (16GB) device, the highest density in a single MLC chip, based on the specification and endurance of 16nm 64Gb MLC. The product is planned to be mass produced from the beginning of next year.

Generally, the thinner process technology shrinks the more frequent interferences among cells occur, but SK Hynix applied up-to-date air-gap technology to overcome the interferences among the cells. The air-gap technology builds insulation shield with vacuum holes (air) between circuits not with insulating substances.

“After the Company developed and started to mass produce the industry’s thinnest 16nm product then now prepared high density NAND flash product portfolio thanks to the development of 16nm 128Gb MLC. The company plans to actively respond to our customers’ demands with the NAND Flash products which have high reliability and endurance” said Jin Woong Ki, senior vice president and the head of flash tech development at SK Hynix.

SK Hynix will strengthen its competitiveness in NAND flash solution while accelerating the development of TLC (triple level cell) and 3D NAND flash.