Hardware news tagged 10nm

Tuesday, September 11, 2012


Samsung Starts to Build 10nm NAND Flash Manufacturing Complex in China. {keywords}
[9:58 pm]

Samsung Breaks Ground for $2.3 Billion NAND Flash Facility in Xi'an, China

 

Wednesday, September 5, 2012


TSMC to Start 450mm Production in 2018 - Company. {keywords}
[10:24 pm]

TSMC and 450mm Manufacturing: Six Years to Go

 

Monday, June 25, 2012


Seagate to Develop Consumer and Enterprise Solid-State Drives with DensBits. {keywords}
[9:18 pm]

Seagate to Design SSDs with 10nm-Class TLC, MLC NAND Flash Memory

 

Wednesday, May 2, 2012


As Latest SSD Prices Hit $0.65 per Gigabyte, OCZ Forecasts Further Drop of Costs. {keywords}
[9:09 pm]

OCZ: New SSD Products Hit $0.65 per Gigabyte, More Cost-Cutting Options Available

 

Tuesday, April 3, 2012


Samsung Set to Manufacture 10nm-Class NAND Flash, Other Chips in China. {keywords}
[10:51 pm]

Samsung to Invest $7 Billion into Chinese Memory Plants over Next Several Years

 

Wednesday, October 5, 2011


Transition to 450mm Semiconductor Wafers Finaly Gains Traction - Analysts. {keywords}
[12:33 pm]

Future Horizons: 450mm Semiconductor Fabs Will Become Inevitable Elements of Industry

 

Tuesday, September 27, 2011


Leading Semiconductor Companies to Invest $4.4 Billion in Nanotechnology R&D in New York. {keywords}
[7:53 pm]

Intel, IBM, Globalfoundries, TSMC and Samsung to Research New Process Technologies, 450mm Manufacturing on New York, USA

 

Tuesday, July 26, 2011


Intel Readies Skylake Micro-Architecture: Post-Haswell Era Begins to Shape.
[4:40 pm]

Intel's Skylake, Skymont to Arrive in 2016 and 2017 at 14nm and 10nm Nodes

 

Friday, January 28, 2011


SanDisk, Toshiba Gearing Up for 10nm-Class Process Technology for Flash Memory.
[10:06 am]

SanDisk to Start Investments into 10nm-Class Fabrication Process in 2011

 

Thursday, December 9, 2010


Intel Confirms 450mm Nature of New Production Facility.
[12:23 pm]

Intel D1X Fab Is "Compatible" with 450mm Production Equipment

 

Sunday, October 31, 2010


Intel, Toshiba and Samsung to Jointly Develop 10nm Process Technology - Report.
[12:26 pm]

New Semiconductor Alliance May Be Formed

 

Monday, October 25, 2010


Intel's D1X Fab to Be Ready for 450mm Wafers - Report.
[9:25 pm]

Intel's Next-Gen Development Fab Will Be Able to Use 450mm Wafers