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Hardware news tagged 30nm
Monday, September 17, 2012
Samsung Begins to Produce LPDDR3 Memory Using 30nm-Class Technology.
Samsung Starts Production of 30nm LPDDR3 DRAM
Monday, July 2, 2012
Samsung Samples Industry’s First DDR4 Memory Modules for Servers.
Samsung Begins to Sample 16GB DDR4 RDIMMs
Thursday, February 9, 2012
Micron Further Cuts Memory Power Consumption with DDR3Lm Chips.
Micron Reveals DDR3Lm DRAM with Low Self-Refresh Power
Tuesday, January 24, 2012
Elpida Shows Off Resistance RAM Prototype.
Elpida Demos 64Mb ReRAM Prototype
Wednesday, January 18, 2012
Samsung Combines DRAM and NAND Flash on Multi-Chip Package.
Samsung’s new eMCP Packs 30nm DRAM with 20nm NAND
Thursday, November 24, 2011
Elpida Introduces 4Gb LPDDR3 Memory Device.
Elpida Debuts 4Gb LPDDR3 Memory Chip
Thursday, September 29, 2011
Samsung Shows Off Industry's First LPDDR3 Memory.
Samsung Develops World's First 4Gb LPDDR3 Chip
Wednesday, September 21, 2011
Samsung Initiates DRAM, NAND Production at World's Largest Memory Facility.
Samsung's New DRAM Fab Starts Production of 20nm DDR3, NAND
Thursday, June 9, 2011
Samsung Begins to Ship Consumer Memory Modules with 30nm DRAM.
Latest-Generation Memory Class Reaches Mainstream Consumers
Thursday, April 7, 2011
Elpida Develops 4Gb Mobile DDR2 Memory for High-End Portable Devices.
Elpida Follows Samsung with 4Gb 1066MHz Mobile DDR2 Memory
Friday, March 25, 2011
Samsung Starts Production of 4Gb LPDDR2 at 30nm Process Technology.
Samsung's New Memory Chip to Enable Thinner, More Powerful Mobile Devices
Monday, December 20, 2010
Samsung Samples New MLC-Based SSDs for Enterprise.
Samsung Readies SSDs with Toggle DDR NAND Flash
Thursday, July 22, 2010
Samsung and Toshiba to Support DDR NAND Specification.
Largest Flash Makers to Jointly Promote DDR2 NAND Spec
Wednesday, July 21, 2010
Samsung's New 2133MHz Memory Chips Can Power Next-Gen Memory Modules for Overclockers.
Samsung to Initiate Mass Production of 2Gb DDR3 Memory Chips Using 30nm Tech
Monday, February 1, 2010
Samsung to Make DDR3 Memory Using 30nm Process Technology.
Samsung Develops 30nm Process Technology for DRAM
Tuesday, December 1, 2009
Samsung Begins to Mass Produce NAND Flash with DDR Interface.
Samsung’s New NAND Flash Boasts Improved Data Read Speed, Same Power Consumption
Samsung Makes 3-Bit-per-Cell Flash at 30nm Node
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