Hardware news tagged 30nm

Monday, September 17, 2012


Samsung Begins to Produce LPDDR3 Memory Using 30nm-Class Technology. {keywords}
[9:02 pm]

Samsung Starts Production of 30nm LPDDR3 DRAM

 

Monday, July 2, 2012


Samsung Samples Industry’s First DDR4 Memory Modules for Servers. {keywords}
[9:10 pm]

Samsung Begins to Sample 16GB DDR4 RDIMMs

 

Thursday, February 9, 2012


Micron Further Cuts Memory Power Consumption with DDR3Lm Chips. {keywords}
[2:58 pm]

Micron Reveals DDR3Lm DRAM with Low Self-Refresh Power

 

Tuesday, January 24, 2012


Elpida Shows Off Resistance RAM Prototype. {keywords}
[10:33 pm]

Elpida Demos 64Mb ReRAM Prototype

 

Wednesday, January 18, 2012


Samsung Combines DRAM and NAND Flash on Multi-Chip Package. {keywords}
[10:38 pm]

Samsung’s new eMCP Packs 30nm DRAM with 20nm NAND

 

Thursday, November 24, 2011


Elpida Introduces 4Gb LPDDR3 Memory Device. {keywords}
[9:24 pm]

Elpida Debuts 4Gb LPDDR3 Memory Chip

 

Thursday, September 29, 2011


Samsung Shows Off Industry's First LPDDR3 Memory.
[11:24 am]

Samsung Develops World's First 4Gb LPDDR3 Chip

 

Wednesday, September 21, 2011


Samsung Initiates DRAM, NAND Production at World's Largest Memory Facility.
[8:27 pm]

Samsung's New DRAM Fab Starts Production of 20nm DDR3, NAND

 

Thursday, June 9, 2011


Samsung Begins to Ship Consumer Memory Modules with 30nm DRAM.
[7:39 pm]

Latest-Generation Memory Class Reaches Mainstream Consumers

 

Thursday, April 7, 2011


Elpida Develops 4Gb Mobile DDR2 Memory for High-End Portable Devices.
[8:47 am]

Elpida Follows Samsung with 4Gb 1066MHz Mobile DDR2 Memory

 

Friday, March 25, 2011


Samsung Starts Production of 4Gb LPDDR2 at 30nm Process Technology.
[9:04 am]

Samsung's New Memory Chip to Enable Thinner, More Powerful Mobile Devices

 

Monday, December 20, 2010


Samsung Samples New MLC-Based SSDs for Enterprise.
[6:01 pm]

Samsung Readies SSDs with Toggle DDR NAND Flash

 

Thursday, July 22, 2010


Samsung and Toshiba to Support DDR NAND Specification.
[7:28 am]

Largest Flash Makers to Jointly Promote DDR2 NAND Spec

 

Wednesday, July 21, 2010


Samsung's New 2133MHz Memory Chips Can Power Next-Gen Memory Modules for Overclockers. {keywords}
[10:55 am]

Samsung to Initiate Mass Production of 2Gb DDR3 Memory Chips Using 30nm Tech

 

Monday, February 1, 2010


Samsung to Make DDR3 Memory Using 30nm Process Technology.
[12:30 pm]

Samsung Develops 30nm Process Technology for DRAM

 

Tuesday, December 1, 2009


Samsung Begins to Mass Produce NAND Flash with DDR Interface.
[5:35 pm]

Samsung’s New NAND Flash Boasts Improved Data Read Speed, Same Power Consumption

Samsung Begins to Produce 3-Bit-per-Cell Flash Memory Using 30nm Process Tech.
[10:47 am]

Samsung Makes 3-Bit-per-Cell Flash at 30nm Node